Vishay General Semiconductor - Diodes Division VS-GB100LH120N
VS-GB100LH120N
via-VS-GB100LH120N
Bulk
IGBT Module Single 1200 V 200 A 833 W Chassis Mount Double INT-A-PAK
Stock: 12964
Unit Price: Call
VS-GB100LH120N Information
Vishay General Semiconductor - Diodes Division VS-GB100LH120N technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division VS-GB100LH120N.
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TypeParameter
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Mfr
Vishay General Semiconductor - Diodes Division
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Series
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Package
Bulk
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Product Status
Obsolete
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IGBT Type
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Configuration
Single
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Voltage - Collector Emitter Breakdown (Max)
1200 V
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Current - Collector (Ic) (Max)
200 A
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Power - Max
833 W
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Vce(on) (Max) @ Vge, Ic
1.77V @ 15V, 100A (Typ)
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Current - Collector Cutoff (Max)
1 mA
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Input Capacitance (Cies) @ Vce
8.96 nF @ 25 V
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Input
Standard
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NTC Thermistor
No
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Operating Temperature
-40°C ~ 150°C (TJ)
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Mounting Type
Chassis Mount
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Package / Case
Double INT-A-PAK (3 + 4)
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Supplier Device Package
Double INT-A-PAK
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Base Product Number
GB100
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Shipping Cost
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Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
DHL Express, 5-7 business days.
The following are some common countries logistic time.
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